NAND flash increases capacity by stacking cells vertically. The higher the stack, the longer and thinner the wiring connecting top to bottom, and the higher the resistance — bringing signal delay and heat.

Tungsten, long the standard wiring material, sees resistance rise sharply at very thin dimensions. Molybdenum's resistance increases more gently in that range, making it attractive for ultra-high stacks.

Switching materials, however, means changing deposition processes, equipment and precursor chemicals together. Existing lines cannot simply be reused, initial investment is heavy, and stabilising yields takes time.

The industry expects precursor materials suppliers and deposition equipment makers to benefit first. Taiwanese, Korean and Japanese firms sit across the relevant supply chain.

Timing and pace vary by manufacturer roadmap. Some have not disclosed which generation will adopt it fully, so estimates of the demand pool span a wide range.